suface mount package. s mhop microelectronics c orp. a SP2106 symbol v ds v gs i dm 50 w a p d c 0.25 -55 to 150 i d units parameter 100 1 4.1 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) ( ) max 100v 1a 2.4 @ vgs=4.5v 2.0 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.1 www.samhop.com.tw jul,18,2013 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product 0.8 1.6 pin1 e as single pulse avalanche energy d mj 2.5 pdfn 5x6 esd protected. 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8
symbol min typ max units bv dss 100 v 1 i gss 10 ua v gs(th) v 1.6 g fs s c iss 64 pf c oss 14 pf c rss 7 pf q g 7.6 nc 7.2 54 16 t d(on) 2 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =0.5a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.5a v ds =10v , i d =0.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =10ma reverse transfer capacitance on characteristics v gs =4.5v , i d =0.5a 2.0 1.9 2.4 ohm c f=1.0mhz c SP2106 ver 1.1 www.samhop.com.tw jul,18,2013 2 nc q gs nc q gd 0.5 0.7 gate-drain charge gate-source charge v ds =50v,i d =0.5a, v gs =10v drain-source diode characteristics and maximum ratings nc 1.4 v ds =50v,i d =0.5a,v gs =10v v ds =50v,i d =0.5a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =0.5a 0.86 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 10us, duty cycle < 1%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 1 1.8 3 1
SP2106 ver 1.1 www.samhop.com.tw jul,18,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) ( ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 0.6 0.4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 0.8 0.6 0.4 0.2 0 0 0.8 4.8 4.0 3.2 2.4 1.6 -55 c 3.6 3.0 2.4 1.8 1.2 0.6 0.1 2.2 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.7 0.6 1.3 1.2 1.1 1.0 0.9 0.8 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =10ma 0.2 v gs =10v v gs =4.5v 2.0 v gs =4.5v i d =0.5a v gs =10v i d =0.5a v gs =10v 1.0 0.8 0.6 0.4 0.2 0.01 v ds =v gs i d =250ua v gs =4.5v 25 c tj=125 c v gs =3v v gs =3.5v 0.8 1.0
SP2106 ver 1.1 www.samhop.com.tw jul,18,2013 4 r ds(on) ( ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 4.8 4.0 3.2 2.4 1.6 0.8 0 2468 10 0 10 1 00.7 20 3.5 1.4 2.1 2.8 90 75 60 45 30 15 0 10 15 20 25 30 10 8 6 4 2 0 0 0.8 1.6 0.4 1.2 2.0 2.4 125 c i d =0.5a 0 5 vds=50v,id=0.5a vgs=10v 25 c 125 c 0.1 1 10 1 0.1 v gs =10v t a =25 c single pulse 10 0us 1m s 10m s 1 0 0 ms d c 100 25 c 75 c 0.01 r d s (on) limit 10 75 c
SP2106 www.samhop.com.tw 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 0.001 0.01 0.1 1 single pulse 0.00001 1000 100 10 1 0.1 0.01 0.001 0.0001 p dm 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datas heet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th t 1 t 2 0.5 0.2 0.1 0.05 0.02 0.01 ver 1.1 jul,18,2013
SP2106 www.samhop.com.tw jul,18,2013 6 package outline dimensions ver 1.1 top view pdfn 5x6-8l bottom view side view symbols millimeters a a1 b c d e e1 min max 0.85 1.00 0.00 0.05 0.30 0.50 0.15 0.25 e l l1 3.82 bsc 0.45 0.00 0 o nom 0.95 0.40 0.20 1.27 bsc 0.15 0 10 o 5.20 bsc 0.50 0.60 0.75 e e1 l1 d e e2 d1 d2 l2 l b a a1 c d2 e2 l2 4.35 bsc 5.55 bsc 6.05 bsc 0.55 0.65 d1 0.68 ref
www.samhop.com.tw 7 top marking definition pdfn 5x6-8l 2106 xxxxxx product no. samhop logo pin 1 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no.(a,b,c...z) SP2106 jul,18,2013 ver 1.1
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